SEMICONDUCTOR DEVICE WITH CIRCUITS FORMED WITH ESSENTIALLY UNIFORM PATTERN DENSITY

摘要

A semiconductor device includes a first circuit section (200A) having at least one transistor (Tl) coupled to at least three conductive lines (202, 204, 206) formed from a conductive layer. No more than one of the at least one of the three conductive lines (204) forms a control terminal of the at least one transistor. In addition, a second circuit section (200B) includes at least two transistors (T3 - T6). Each such transistor has a control terminal (234, 236, 238, 240) formed by a conductive line formed from the same conductive layer. The three conductive lines of the first circuit section have the same pitch pattern as the conductive lines of the second circuit section.