METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要
A method of manufacturing a TFT(Thin Film Transistor) array substrate is provided to form a pixel electrode through wet etch using a diluted etchant to reduce an etch rate, thereby decreasing CD skew and preventing residue after etching. A gate line(22) is formed on an insulating substrate(10). A data line(62) is insulated from the gate line and intersects the gate line. A transparent conductive oxide layer(81) is connected to a part of the data line and does not include indium. The transparent conductive oxide layer is wet-etched by using a basic etchant and a diluted etchant mixed with deionized water to form a pixel electrode.
申请公布号
KR20080058869(A)
申请公布日期
2008.06.26
申请号
KR20060133048
申请日期
2006.12.22
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, BYEONG JIN;PARK, HONG SICK;CHOUNG, JONG HYUN;HONG, SUN YOUNG;KIM, BONG KYUN;SHIN, WON SUK