| 摘要 |
PROBLEM TO BE SOLVED: To increase the operation speed of a semiconductor memory. SOLUTION: This semiconductor memory has sub-arrays connecting the memory cells arranged in matrixes, local bit lines connected to memory cells arranged in the column direction in the sub-arrays, global bit lines connected to the local bit lines, and a column decoder connected to the global bit lines. However, in the farthest sub-array formed in an area most apart from the column decoder among those sub-arrays, the global bit lines are not formed. COPYRIGHT: (C)2008,JPO&INPIT
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