| 摘要 |
This invention relates to a semiconductor device ( 105 ) and a method of manufacturing this device. A preferred embodiment of the invention is a semiconductor device ( 105 ) comprising a silicon semiconductor substrate ( 110 ), an oxide layer ( 115 ) and an active layer ( 120 ). In the active layer, insulating areas ( 125 ) and an active area ( 127 ) have been formed. The active area ( 127 ) comprises a source ( 180 ), a drain ( 182 ) and a body ( 168 ). The source ( 180 ) and drain ( 182 ) also comprise source and drain extensions ( 184, 186 ). The active layer ( 120 ) is provided with a gate ( 170 ). On both sides of the gate ( 170 ), L-shaped side wall spacers are located. The source ( 180 ) and drain ( 182 ) also comprise silicide regions ( 190, 192 ). A characteristic of these regions is that they have extensions ( 194, 196 ) located under the side wall spacers ( 136, 138 ). These extensions ( 194, 196 ) strongly reduce the series resistance of the source ( 194 ) and drain ( 196 ), which significantly improves the performance of the semiconductor device ( 105 ).
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