| 摘要 |
A method for fabricating a semiconductor device is provided. The method includes forming a gate insulating layer on a semiconductor substrate, forming a gate electrode on the gate insulating layer, forming spacers on sidewalls of the gate electrode, forming impurity regions in the semiconductor substrate using the gate electrode and the spacers as masks, forming a capping layer over the semiconductor substrate to cover the gate electrode and the impurity regions, the capping layer having a compressive stress, and implanting impurity ions to portions of the capping layer corresponding to the impurity regions, such that the portions of the capping layer have a local tensile stress.
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