| 摘要 |
Method of fabricating a semiconductor device, comprising the steps of providing a substrate with a plurality of contact portions; forming a plurality of electrical contacts such that a contact is electrically connected to each of the contact portions, the contacts each comprising a contact area for connecting to a further part of the semiconductor device; forming an isolating region such that each contact is at least partially surrounded by the isolating region; performing an etching step in order to form a plurality of recesses in the isolating region, wherein a recess is formed adjacent to each contact; and filling the recesses with conductive material in order to enlarge the contact areas of the contacts.
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