SENSE AMPLIFIER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THERE-OF

摘要

A sense amplifier circuit of a semiconductor memory device and an operation method thereof are provided to improve data sensing characteristics, and to reduce chip size by removing or reducing a dummy cell. A bit line sense amplifier(611,612) is connected to a bit line, and senses and amplifies a signal of the bit line. A calibration circuit(620) calibrates a voltage level of the bit line on the basis of a logic threshold of the bit line sense amplifier. After the voltage level of the bit line is calibrated, the bit line sense amplifier senses and amplifies a signal of the bit line. The bit line sense amplifier comprises a 2-stage cascade type latch.