| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent increased resistance at an electrode of a capacitance element and disconnection. <P>SOLUTION: In a semiconductor memory device 100 wherein a plurality of capacitance elements 112 are formed on a semiconductor substrate 101, each of the plurality of capacitance elements 112 has a bottom electrode 109, a metal oxide film 110 formed on the bottom electrode 109, and a top electrode 111 formed on the metal oxide film 110. One of the bottom electrode 109 and the top electrode 111 is a common electrode formed to function as an wiring to be connected among many capacitance elements 112. The common electrode is composed of a mixture of platinum group metal and platinum group metal oxide, and has at least a conductive path made of platinum group metal along the wiring direction in the common electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT |
