| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which a waiting time is reduced, that is accompanied by erasion processing executed before execution of processing other than erasion for securing a free region when processing other than erasion is executed. <P>SOLUTION: When erasion processing E1 is executed to secure a free capacity after processing other than erasion T1 is executed, erasion processing E1 is divided into erasion small processing E1a constituted of before erasion processing Er1 and erasion small original processing Ee1a and erasion small processing E1b constituted of erasion small original processing Ee1b and after erasion processing Eo1, processing other than erasion T2 is executed after finish of erasion small processing E1a, and residual erasion small processing E1b is executed after finish of this processing other than erasion T2 and erasion processing E1 is completed. After erasion processing E1 is finished (that is, erasion small processing E1b is finished), other processing items other than erasion T3, T4, ... are executed successively. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
