| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of being miniaturized without lowering a breakdown strength, and to provide a manufacturing method for the semiconductor element. SOLUTION: First P-type semiconductor layers 108 extending from the surface of a low-concentration N-type semiconductor substrate 107 to the inside of a layer and second P-type semiconductor layers 108a are formed, the semiconductor layers 108a are overhung to mesa sections 109 and a metal electrode 104 is formed to one main surface of the semiconductor substrate 102. Since the mesa sections 109 and the second P-type semiconductor layers 108a can maintain the breakdown strength without forming a voltage resistant structure outside the active regions of these semiconductors, element miniaturization is enabled. COPYRIGHT: (C)2008,JPO&INPIT |
