发明名称 SURFACE MODIFIER FOR RESIST AND METHOD FOR FORMATION OF RESIST PATTERN WITH THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a surface modifier for a resist modifying the surface of a photoresist film to sufficiently enhance the wettability with a developer solution and excellent in safety, and to provide a method for formation of a resist pattern with the modifier. SOLUTION: The surface modifier for a resist consists of an aqueous solution containing: at least one kind of amine oxide compound having a 8-20C alkyl group or hydroxyalkyl group which may be interrupted by an oxygen atom and two of 1-5C alkyl groups or hydroxyalkyl groups; and at least one kind of amine oxide compound having two of 8-20C alkyl groups or hydroxyalkyl groups which may be interrupted by an oxygen atom and a 1-5C alkyl group or hydroxyalkyl group. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008145674(A) 申请公布日期 2008.06.26
申请号 JP20060331854 申请日期 2006.12.08
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KUMAGAI TOMOYA;KOSHIYAMA ATSUSHI;WAKIYA KAZUMASA;SAWANO ATSUSHI
分类号 G03F7/38;H01L21/027 主分类号 G03F7/38
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