发明名称 |
HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for adequately regulating a heat treatment temperature by measuring the real temperature of wafer. SOLUTION: In a batch type vertical hot wall heat treatment apparatus 10, an L letter shape radiation thermometer 50 having a holding pipe 52 and a wave guide bar 56 having a total reflection surface 57 is inserted into a cap 20 for sealing a process tube 11 to connect the radiation thermometer 50 to the controller 33 for feedback controlling a heater 32 according to a measured temperature by the radiation thermometer 50. The wave guide bar 56 is inserted between wafers 1 and 1 held by a boat 21 to be rotated by a holding pipe 52 for measuring a temperature at the center portion and the peripheral portion of a wafers 1 with the total reflection surface 57. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008147656(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20070311440 |
申请日期 |
2007.11.30 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
MIYATA TOSHIMITSU |
分类号 |
H01L21/31;H01L21/22;H01L21/324 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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