发明名称 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for adequately regulating a heat treatment temperature by measuring the real temperature of wafer. SOLUTION: In a batch type vertical hot wall heat treatment apparatus 10, an L letter shape radiation thermometer 50 having a holding pipe 52 and a wave guide bar 56 having a total reflection surface 57 is inserted into a cap 20 for sealing a process tube 11 to connect the radiation thermometer 50 to the controller 33 for feedback controlling a heater 32 according to a measured temperature by the radiation thermometer 50. The wave guide bar 56 is inserted between wafers 1 and 1 held by a boat 21 to be rotated by a holding pipe 52 for measuring a temperature at the center portion and the peripheral portion of a wafers 1 with the total reflection surface 57. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008147656(A) 申请公布日期 2008.06.26
申请号 JP20070311440 申请日期 2007.11.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MIYATA TOSHIMITSU
分类号 H01L21/31;H01L21/22;H01L21/324 主分类号 H01L21/31
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