SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A semiconductor device includes a double gate transistor which comprises an active region of a fin type and a pair of gate electrodes disposed opposite to each other through the active region. A height of the gate electrodes is higher than that of the active region and equal to or smaller than a calculated gate electrode height calculated using the following formula: $\left(\left(\mathrm{Gate}\mathrm{Electrode}\mathrm{Height}\left[\mathrm{nm}\right]\right)-\left(\mathrm{Active}\mathrm{Region}\mathrm{Height}\left[\mathrm{nm}\right]\right)\right)/\left(\mathrm{Active}\mathrm{Region}\mathrm{Height}\left[\mathrm{nm}\right]\right)=3.5{}^{-5}x{\left(\mathrm{Gate}\mathrm{Length}\left[\mathrm{nm}\right]\right)}^2-0.002x\left(\mathrm{Gate}\mathrm{Length}\left[\mathrm{nm}\right]\right)+0.16.$