发明名称 MEMORY SYSTEM WITH DEPLETION GATE
摘要 A memory system includes a substrate, forming a first insulator layer over the substrate, forming a charge-storage layer over the first insulator layer, forming a second insulator layer over the charge-storage layer, and forming a depletion gate having a depletion phenomenon over the second insulator layer.
申请公布号 US2008150005(A1) 申请公布日期 2008.06.26
申请号 US20070694089 申请日期 2007.03.30
申请人 SPANSION LLC 发明人 DING MENG;SUH YOUSEOK;ZHENG WEI;CHANG KUO-TUNG
分类号 H01L29/792 主分类号 H01L29/792
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