| 摘要 |
<p>This invention provides a method for manufacturing a deformation Si substrate, comprising at least forming a lattice relaxed SiGe layer on a silicon single crystal substrate, flattening the surface of the SiGe layer by CMP, and forming a deformation Si layer on the surface of the flattened SiGe layer. The method is characterized by, before the formation of the deformation Si layer on the surface of the flattened lattice relaxed SiGe layer, subjecting the surface of the SiGe layer to SC1 washing, heat treating the substrate provided with the SiGe layer subjected to SC1 washing in a hydrogen-containing atmosphere of 800ºC or above, forming a protective Si layer on the surface of the SiGe layer on the heat treated substrate immediately after the heat treatment without lowering the temperature to below 800ºC after the heat treatment, and forming a deformation Si layer on the surface of the protective Si layer at a temperature below the protective Si layer forming temperature. The above method can manufacture a deformation Si substrate having low surface roughness, threading dislocation density, and particle level.</p> |
