| 摘要 |
<p>An electron lithography method includes a step of forming a rear dispersion suppressing layer (33) containing a sulfonic acid compound on a substrate (31) having a portion to be etched; a step of preparing a body, which has a resist layer (32) and is to be processed, on the rear dispersion suppressing layer; and a step of forming a pattern by irradiating the surface of the resist layer (32) with electronic beams.</p> |
