| 摘要 |
<p>The invention concerns an IGFET device comprising:
- a semiconductor body (2) having a major surface,
- a source region (3) of first conductivity type abutting said surface,
- a drain region (6, 7) of said first conductivity type abutting said surface and spaced from said source region with a channel (5) therebetween,
- an active gate (8) overlying said channel and insulated from the channel by a first dielectric material (9),
- a dummy gate (10) positioned between said active gate (8) and said drain region (7) and insulated from the active gate by a second dielectric material (21) so that a capacitance is formed between the active gate (8) and the dummy gate (10), said dummy gate being insulated from the drain region (6, 7) by said dielectric material (9),
wherein the active gate (8) and the dummy gate (10) comprise a stack of multiple metal layers (17, 18, 19, 20) disposed in parallel and forming the electrodes of said capacitance.</p> |
