Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device

摘要

An information storage device includes a magnetic layer and a supply unit. The magnetic layer (100) includes a plurality of regions, a first region (80) having a first magnetic anisotropic energy and a second region (90) having a second magnetic anisotropic energy. The first and second regions are arranged alternately, and the second region is doped with impurity ions. The second magnetic anisotropic energy is less than the first magnetic anisotropic energy. The supply unit applies energy to the magnetic layer for moving magnetic domain walls within the magnetic layer.