| 摘要 |
A chemical mechanical polishing(CMP) composition for CMP of tungsten is provided to reduce the degree of tungsten etching while avoiding the use of a large amount of a tungsten etching inhibitor. A chemical mechanical polishing(CMP) composition for CMP slurry of tungsten comprises 0.5-9% of a per-type oxidant, 1-300 ppm of iron, and an anionic fluoro-surfactant, and has a pH of 2.5-7. The CMP composition preferably has a pH of 2.3-6.5, the per-type oxidant includes hydrogen peroxide, and the anionic fluoro-surfactant includes an anionic phosphate fluoro-surfactant. The per-type oxidant is present in an amount of 2-6%, the slurry comprises 3-80 ppm of iron, and the anionic fluoro-surfactant is present in an amount of 20- about 500 ppm.
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