| 摘要 |
<p>According to one example embodiment, an inductive element is used for power-conversion applications. The inductive element includes a substrate ( 188 ) having a first metal layer ( 190 ) on the substrate having a thickness greater than one micrometer and arranged as a first set of adjacent non-intersecting conducting segments. There is a ferromagnetic-based body ( 192 ) located on the first metal layer that has a ferromagnetic inner core area. At least one other metal layer ( 198 ) is on the ferromagnetic-based body and arranged as a second set of adjacent non-intersecting conducting segments. A plurality of conductive vias ( 194 ) are located in the ferromagnetic-based body and are arranged to connect respective ones of the first set of adjacent non-intersecting conducting segments to respective ones of the second set of adjacent non-intersecting conducting segments therein providing a contiguous conductive wrap around the inner core area. Other example embodiments include layer thicknesses in excess of those used in normal semiconductor processing.</p> |
