HIGH ETCH RESISTANT HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTY, METHOD OF MANUFACTURING OF PATTERNING MATERIALS AND SEMICONDUCTOR IC DEVICE PRODUCED BY THE METHOD

摘要

An antireflective hard mask composition, a method for forming a pattern on a substrate by using the composition, and a semiconductor integrated circuit device formed by the method are provided to improve optical properties, mechanical properties and dry etching resistance and to form a pattern having a high aspect ratio. An antireflective hard mask composition comprises 1-20 wt% of a polymer containing an aromatic ring represented by the formula 1, 2 or 3; 0.001-5 wt% of an initiator; and 75-98.8 wt% of an organic solvent, wherein 1<=n<750; R1 is -CH2-, -CH2-Ph-CH2-, -CH2-Ph-Ph-CH2-, -CH(-OH-substituted Ph)-, or -CH(-Ph)-; and R2, R3 and R4 are H, a hydroxyl group, a C1-C10 alkyl group, a C6-C10 aryl group, an allyl group, or a halogen atom.