| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to reduce the stress between the top metal line and an IMD(Inter Metal Dielectric) by controlling the thickness of a liner layer. A photodiode and a transistor are formed on a substrate. An interlayer dielectric(110) is formed on the substrate. A via-plug(130) is formed on the interlayer dielectric. A first liner layer(140) is formed on the interlayer dielectric including the via-plug, as the thickness of 200 to 400 Å. A metal line(160) is formed on the first liner layer. A diffusion barrier layer(120) is formed on the metal line.
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