SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to prevent operation error of the semiconductor memory device during power-up or initialization of the semiconductor memory device. A reset signal generation part(100) provides a precharge enable signal with a second voltage level performing precharge operation in response to at least one first voltage level signal by receiving a power up initialization signal and a reset signal. A precharge control signal generation part(200) provides a bank precharge control signal with a first voltage level by receiving the precharge enable signal and a refresh signal, and generates a bank precharge control signal capable of precharging a bank additionally in response to the precharge enable signal with the second voltage level. A bank precharge control part(300) provides a bank precharge signal to precharge all banks of a memory cell in response to the bank precharge control signal with the first voltage level.