发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <p>A semiconductor device and a manufacturing method of the same are provided to make the semiconductor device thin while maintaining the freedom degree for sizes or structures of plural semiconductor chips laminated on a support substrate. A semiconductor device includes a wiring substrate(41), a first semiconductor chip(42), and a second semiconductor chip(44). The first semiconductor chip is mounted over the wiring substrate. The second semiconductor chip is mounted on the first semiconductor chip in such as way that a position of the second semiconductor chip is shifted for that of the first semiconductor chip. A part of a main surface of the second semiconductor chip faces the first semiconductor chip. An electrode pad on the main surface of the second semiconductor chip is connected to a second semiconductor chip coupling pad of the wiring substrate by a coupling unit.</p>
申请公布号 KR20080058162(A) 申请公布日期 2008.06.25
申请号 KR20070105384 申请日期 2007.10.19
申请人 FUJITSU LIMITED 发明人 NISHIMURA TAKAO;NARISAWA YOSHIAKI
分类号 H01L23/28 主分类号 H01L23/28
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