NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND OPERATING METHOD THEREOF

摘要

A nonvolatile memory device using a variable resistive element and an operating method thereof are provided to increase reliability of write/read operation, by controlling a voltage level of a bit line or a sensing node accurately. A memory cell array includes a number of first lines, a number of second lines and a number of nonvolatile memory cells. Each nonvolatile memory cell(70) is coupled to each first line and each second line. A selection circuit selects at least one nonvolatile memory cell. A first write/read mergence circuit includes a first line level control part(20), a compensation part(14) and a sense amplifier part(18). The first line level control part writes data in the nonvolatile memory cell by providing a write voltage during write operation and clamps the first line by providing a clamp voltage during read operation, to the first line coupled to the selected nonvolatile memory cell. The compensation part provides a compensation current to the first line in order to compensate level decrease of the first line generated by a cell current flowing in the selected nonvolatile memory cell during the read operation. The sense amplifier part outputs comparison result by comparing the level of the first line with a reference level during the read operation.