GROUP ¥² NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE,申请号KR20067013720-传众专利搜索

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发明名称	GROUP ¥² NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE
摘要
申请公布号	KR100841269(B1)	申请公布日期	2008.06.25
申请号	KR20067013720	申请日期	2006.07.07
申请人		发明人
分类号	H01L21/20;H01L33/00	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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