| 摘要 |
<p>The method involves generating cavities (19) in a wafer substrate (11) and sensors, which are arranged in the cavities. The cavities are covered by a cover. The cavities are generated by ion beam cutting, dry reactive ion etching (DRIE) or wet etching of the rear side of the wafer substrate. The sensors are generated, in which a gas sensitive film is placed in the cavities by drop-coating or in flying-drop method. An insulating layer (12), particularly a silicon dioxide or silicon nitride layer is placed on the upper side of the wafer substrate and electrode (13).</p> |
