SEMICONDUCTOR DEVICES AND METHOD OF MAKING THE SAME

摘要

A semiconductor device and a method for forming the same are provided to reduce contact resistance due to a contact surface between a upper contact surface and an upper wire by only a process of additionally etching an upper surface of an inter layer dielectric. A method for forming a semiconductor device includes: forming an interlayer dielectric(20') on a substrate(10) on which a lower wire and a device are formed; patterning the interlayer dielectric to form a contact hole partially exposing the lower wire and the device; stacking a metal layer for a plug on the substrate in which the contact hole is formed and removing the metal layer for the plug stacked on an upper surface of the interlayer dielectric to leave a contact plug(30) in the contact hole; blank-etching the interlayer dielectric to protrude an upper portion of the contact plug on an upper surface of the interlayer dielectric; and stacking and patterning an upper wire layer on the substrate to form an upper wire.