发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, such as a microprocessor, which is provided with rapidity, low electric power, and reliability at the same time. <P>SOLUTION: The device has a main circuit (LOG) which comprises a transistor configured on a semiconductor substrate, and a substrate bias control circuit (VBC) which controls voltage imposed to the substrate. The main circuit has a switching transistor (MN1, MP1) which controls voltage imposed to the substrate. A control signal outputted from the substrate bias control circuit is inputted into a gate of the switching transistor, and the control signal is returned to the substrate bias control circuit. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP4106033(B2) 申请公布日期 2008.06.25
申请号 JP20040027489 申请日期 2004.02.04
申请人 发明人
分类号 H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L27/10;H03K17/06;H03K17/66;H03K19/00 主分类号 H01L21/822
代理机构 代理人
主权项
地址