发明名称 Semiconductor device having a via hole and its manufacturing method
摘要 A semiconductor device comprises at least one first electrode (11b) provided on the front surface of a semiconductor chip and electrically connected to at least one of electrodes that constitute a transistor, a second electrode (9) provided on the back surface of the semiconductor chip and electrically connected to one of the other electrodes, a via hole penetrating the semiconductor chip from the front surface to the back surface, and a through electrode (11a) a part of which is exposed on the front surface of the semiconductor chip electrically connected to the second electrode (9) through the via hole.
申请公布号 EP1793426(A3) 申请公布日期 2008.06.25
申请号 EP20060023940 申请日期 2006.11.17
申请人 SHARP KABUSHIKI KAISHA 发明人 FUKUMI, MASAYUKI;ADAN, ALBERTO O.
分类号 H01L29/78;H01L21/336;H01L23/48;H01L29/06;H01L29/08;H01L29/417 主分类号 H01L29/78
代理机构 代理人
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