发明名称 |
Semiconductor device having a via hole and its manufacturing method |
摘要 |
A semiconductor device comprises at least one first electrode (11b) provided on the front surface of a semiconductor chip and electrically connected to at least one of electrodes that constitute a transistor, a second electrode (9) provided on the back surface of the semiconductor chip and electrically connected to one of the other electrodes, a via hole penetrating the semiconductor chip from the front surface to the back surface, and a through electrode (11a) a part of which is exposed on the front surface of the semiconductor chip electrically connected to the second electrode (9) through the via hole. |
申请公布号 |
EP1793426(A3) |
申请公布日期 |
2008.06.25 |
申请号 |
EP20060023940 |
申请日期 |
2006.11.17 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUKUMI, MASAYUKI;ADAN, ALBERTO O. |
分类号 |
H01L29/78;H01L21/336;H01L23/48;H01L29/06;H01L29/08;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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