METHOD AND STRUCTURE OF CU METALLIZATION FOR RETADING THE CU CORROSION

摘要

A method and a structure of Cu metallization for retarding corrosion are provided to prevent exposure of a Cu metal wire by via etching and to keep some of the Cu wire from being lost by PACC(Photo Assisted Copper Corrosion) so as to prevent short-circuit of a stack via and a chain contact pattern, thereby improving the yield of the semiconductor device. A method for forming Cu metallization comprises the steps of; coating an insulation layer(404) and forming a trench, using exposure and etching processes; burying the trench, using Cu, and flatting the trench by a CMP process to form a first Cu wire(408); forming a barrier layer on the first Cu layer; and patterning the barrier layer. An area of the barrier layer is patterned by a mask designed to cover all areas contacted with vias.