| 摘要 |
A method for fabricating a metal wire is provided to form a buffer layer on a barrier metal layer and to form a photoresist pattern on the buffer layer to preclude footing of the photoresist pattern and to reduce DC loss of a metal wire. A method for fabricating a metal wire comprises the steps of; forming metal wiring layers(204,206) on a semiconductor substrate(200); forming a buffer layer(208) on the metal wiring layers; coating photoresist on the buffer layer for photo and developing processes and forming a photoresist pattern to form a metal wire; and etching the buffer layer and the metal wiring layers sequentially by an etch process using the photoresist pattern as an etch mask to form the metal layer. The buffer layer is formed by PVD(Physical Vapor Deposition).
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