METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to form uniform thickness of a copper reclamation layer by forming a copper-buried layer through primary electrochemical plating using a copper chloride solution. An IMD(Inter Metal Dielectric)(210) having a via-hole(213) and a trench(215) is formed on a substrate(200). A seed layer(230) is formed on the IMD. A first copper-buried layer is formed on the seed layer including the via-hole by performing the first electrochemical plating using a copper chloride solution. A second copper-buried layer is formed on the first copper-buried layer including the trench by performing the second electrochemical plating using a copper sulfate solution. A metal line is formed within the via-hole and the trench by performing a CMP(Chemical Mechanical Polishing) process.