| 摘要 |
A plasma processing apparatus is provided to improve efficiency of a plasma processing on a surface of a workpiece by concentrating plasma around immediately below an opening at a lower end of a hollow that is penetrated. A plasma processing apparatus includes a first electrode(2), a workpiece stage(100), a second electrode(3), an exhaust portion(5) of process gas, a power source circuit(7), and a gas supply means(8). The first electrode has a hollow which penetrates from an upper end to a lower end. A workpiece is placed on the workpiece stage. The exhaust portion of process gas is formed on an outer circumference side of an opening at a lower end of the hollow along a circumference direction. The power source circuit has a power source applying a voltage between the first electrode and the second electrode. The gas supply means supplies process gas to generate plasma to the exhaust portion of process gas. |
