Method of manufacturing an SOI substrate combining silicon-based areas and GaAs-based areas

摘要

The method involves providing a silicon-on-insulator substrate comprising a silicon support (2) with a silicon based thin layer whose orientation is parallel to a plane. A zone of the thin layer is preserved, and a non-preserved zone of the thin layer is removed till a dielectric layer (3) is exposed. The dielectric layer is opened in the non-preserved zone till a silicon face of the support is exposed. A disoriented germanium layer (7) is grown on the dielectric layer by liquid phase epitaxy or lateral epitaxy. Growth of gallium arsenide zone (8) is obtained from the disoriented germanium.