| 摘要 |
Methods are provided for producing a pristine hydrogen-terminated silicon wafer surface with high stability against oxidation. According to a step 20 of a process, the silicon wafer is treated with high purity, heated dilute hydrofluoric acid with anionic surfactant. In a subsequent step 30, the wafer is rinsed in-situ with ultrapure water at room temperature, and then dried in a subsequent drying step 40. Alternatively, the silicon wafer is treated with dilute hydrofluoric acid in step 22, rinsed with hydrogen gasified water in step 32, and dried in step 42. The silicon wafer produced by the method is stable in a normal clean room environment for greater than 3 days and has been demonstrated to last without significant oxide regrowth for greater than 8 days. |
