| 摘要 |
A semiconductor device and a fabricating method thereof are provided to form a circuit part which is not influenced from a capacitor cell process by performing the capacitor cell process separating from a transistor and metal line processes. A semiconductor device comprises a first substrate(100), a second substrate(200) and a connection electrode(300). A penetration electrode and a capacitor cell(111) are formed on the first substrate. A circuit part including a transistor and a line is formed on the second substrate. The connection electrode connects electrically the capacitor cell and the circuit part. Wherein, the first substrate comprises the capacitor cell and a penetration electrode connected with the capacitor cell. |
