发明名称 |
FIELD-EFFECT TRANSISTOR HAVING A CHANNEL COMPRISING AN OXIDE SEMICONDUCTOR MATERIAL INCLUDING INDIUM AND ZINC |
摘要 |
<p>Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In + Zn) is not less than 35 atomic% and not more than 55 atomic%. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In + Zn + Ga) is set to be 30 atomic% or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.</p> |
申请公布号 |
KR20080058406(A) |
申请公布日期 |
2008.06.25 |
申请号 |
KR20087009155 |
申请日期 |
2006.09.05 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
IWASAKI TATSUYA;DEN TORU;ITAGAKI NAHO |
分类号 |
H01L29/786;H01L29/772 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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