发明名称 FIELD-EFFECT TRANSISTOR HAVING A CHANNEL COMPRISING AN OXIDE SEMICONDUCTOR MATERIAL INCLUDING INDIUM AND ZINC
摘要 <p>Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In + Zn) is not less than 35 atomic% and not more than 55 atomic%. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In + Zn + Ga) is set to be 30 atomic% or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.</p>
申请公布号 KR20080058406(A) 申请公布日期 2008.06.25
申请号 KR20087009155 申请日期 2006.09.05
申请人 CANON KABUSHIKI KAISHA 发明人 IWASAKI TATSUYA;DEN TORU;ITAGAKI NAHO
分类号 H01L29/786;H01L29/772 主分类号 H01L29/786
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