METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a TFT(Thin Film Transistor) substrate is provided to pattern a data metal film through a wet etching process and a dry etching process. A gate insulating film and an active layer(140) are successively formed on a substrate(110) in which a gate wire is formed. A data metal film(150) in which the first to the third metal layers(151~153) are continuously laminated is formed on the active layer. The first photoresist pattern(160) in which a channel forming region has a thickness which is relatively thinner than other regions is formed on the data metal layer. The data metal layer and the active layer are etched by using the first photoresist pattern. The first photoresist pattern is etched, and the second photoresist pattern in which the channel forming region is opened is formed. A primary dry etching of the third metal layer of the channel forming region is performed by using the second photoresist pattern. Secondary dry etching of the second metal layer is performed, and tertiary dry etching of the first metal layer is performed by using the second photoresist pattern.