| 摘要 |
A method for manufacturing a semiconductor device is provided to form a bit line contact hole of exposing a gate and a bit line contact hole of exposing an active region on an peripheral circuit region respectively in order to prevent the bit line contact holes from being not opened and being formed with a small size. A method for manufacturing a semiconductor device comprises the steps of; forming a device isolation layer(115) defining an active region(113) on a semiconductor substrate(111); forming a gate(117) and an interlayer dielectric(119) on the semiconductor substrate; etching the interlayer dielectric by photo and etching processes, using a first bit line contact mask, and forming a first bit line contact hole(125) of exposing the gate; and etching the interlayer dielectric by photo and etching processes, using a second bit line contact mask, and forming a second bit line contact hole(131) of exposing the active region.
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