| 摘要 |
A method for controlling boron diffusion in a semiconductor implantation procedure is provided to maximize a decrease in boron diffusion by performing a boron ion implanting process after performing carbon and fluorine ion implanting processes at the same time. In a method for controlling diffusion in a semiconductor ion implanting process, a fluorine ion implanting process and a carbon ion implanting process are performed at the same time(S200,S202). A boron ion implanting process is performed(S204). An annealing process is performed after performing the boron ion implanting process.
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