发明名称 Semiconductor nanocrystal heterostructures having specific charge carrier confinement
摘要 A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
申请公布号 US7390568(B2) 申请公布日期 2008.06.24
申请号 US20030638546 申请日期 2003.08.12
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 KIM SUNGJEE;BAWENDI MOUNGI G.
分类号 B32B5/16;C04B41/46;C09K11/00;C09K11/88;C30B7/00;C30B29/10;C30B29/60;C30B33/00;D02G3/00;G01N33/543;G01N33/58;G09G3/34;H01L;H01L21/20;H01L21/208;H01L21/368;H01L29/06;H01L29/165;H01L29/205;H01L29/225;H01L29/267;H01L31/00 主分类号 B32B5/16
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