| 摘要 |
A semiconductor devices and a manufacturing method thereof are provided to improve a response time of the semiconductor device by decreasing a depth of a device isolation film formed in a drift region in a source region. A semiconductor device includes well regions(HNWELL,HPWELL), drift regions(NDT,PDT), a gate electrode(106), and a device isolation film. The well regions are formed in a semiconductor substrate. The drift regions are formed on a portion of the well region and arranged to be apart from each other. The gate electrode is formed on the semiconductor substrate between the drift regions. The device isolation film is formed, such that a depth of the device isolation film separating the drift region corresponding to the source region is smaller than the other device isolation regions. A gate insulation film(108) is formed between the semiconductor substrate and the gate electrode.
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