发明名称 P-channel power chip
摘要 An integrated circuit device for delivering power to a load includes a P-MOS power transistor, an N-MOS bypass transistor and a gate driver circuit. The P-MOS power transistor is coupled between a supply voltage node and a power output node of the integrated circuit device, and the N-MOS bypass transistor is coupled between the power output node and a reference node of the integrated circuit device. The gate driver circuit responds to a pulse-width-modulated (PWM) control signal by outputting an active-low drive-enable signal to a gate terminal of the P-MOS power transistor and an active-high bypass-enable signal to a gate terminal of the N-MOS bypass transistor during respective, non-overlapping intervals.
申请公布号 US7391200(B1) 申请公布日期 2008.06.24
申请号 US20070670924 申请日期 2007.02.02
申请人 NETLOGIC MICROSYSTEMS, INC. 发明人 KHANNA SANDEEP;SRINIVASAN VARADARAJAN
分类号 G06F1/18;G05F1/613;H01L25/00;H01L29/78 主分类号 G06F1/18
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