发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THEREOF
摘要 A TFT(Thin Film Transistor) array substrate and a method for fabricating the same are provided to form an organic insulating pattern having a groove with the same shape as a gate pattern, to inject a nano particle solution into the groove, and to cure the nano particle solution, thereby forming a gate pattern. An organic insulation pattern has a groove of a gate pattern shape. The groove includes a gate line(102) and a gate electrode(108). The gate patterns are formed in the groove. The gate lines are crossed with the data lines. A TFT is formed in the cross section area of the gate line and the data line. The TFT is connected to a pixel electrode(118). The shape and thickness of the gate pattern are controlled according to the shape and depth of the groove. The organic insulating pattern includes the photo acryl materials. A gate insulating layer separates the gate pattern and the data line electrically. A passivation layer has a contact hole for exposing the drain electrode of the TFT. The pixel electrode is contacted with the drain electrode through the contact hole.
申请公布号 KR20080056894(A) 申请公布日期 2008.06.24
申请号 KR20060130029 申请日期 2006.12.19
申请人 LG DISPLAY CO., LTD. 发明人 PARK, MI KYUNG;CHAE, GEE SUNG
分类号 G02F1/136 主分类号 G02F1/136
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