| 摘要 |
Four-mask and three-mask process for TN-type liquid crystal display made with combination of the formation process of the signal line and the formation process of the pixel electrode by forming a signal line of a laminate of a transparent conductive layer and a low-resistance metal layer and a pseudo-pixel electrode, removing a low resistance metal layer on the pseudo-pixel electrode during formation of an opening in a passivation insulating layer to obtain a pixel electrode having a transparent conductive layer. Contact formation process by removing the gate insulating layer during formation of the semiconductor layer, and the formation process of the contact and the formation process of the semiconductor layer, or the formation process of the scan line and the formation process of the contact or the formation process of the scan line and the formation process of the semiconductor layer by introducing half-tone exposure technology.
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