发明名称 Chemical sensor using chemically induced electron-hole production at a Schottky barrier
摘要 Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector ( 1 b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
申请公布号 US7391056(B2) 申请公布日期 2008.06.24
申请号 US20050237443 申请日期 2005.09.28
申请人 发明人
分类号 G01N27/00;H01L27/08 主分类号 G01N27/00
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