发明名称 Method of manufacturing a semiconductor device including a protruding electrode bonded to a lead electrode
摘要 To enhance bonding accuracy of a bump electrode, while coping with narrowing pitch of the bump electrodes, a protruding electrode, whose leading end is sharpened, is provided to a semiconductor chip, and the protruding electrode is bonded to a lead electrode, while having a leading end of the protruding electrode bite into the lead electrode.
申请公布号 US7390733(B2) 申请公布日期 2008.06.24
申请号 US20040853285 申请日期 2004.05.26
申请人 SEIKO EPSON CORPORATION 发明人 SAIMEN MUNEHIDE
分类号 H01L21/44;H01L21/60;H01L23/485 主分类号 H01L21/44
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