发明名称 |
Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric |
摘要 |
A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.
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申请公布号 |
US7390703(B2) |
申请公布日期 |
2008.06.24 |
申请号 |
US20050062766 |
申请日期 |
2005.02.22 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
KLAUK HAGEN;HALIK MARCUS;ZSCHIESCHANG UTE;SCHMID GUENTER;BRAUN STEFAN |
分类号 |
H01L21/00;C07F7/08;C07F9/38;C08F132/06;C08F132/08;H01L21/316;H01L21/768;H01L21/84;H01L51/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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