发明名称 Memory block erasing in a flash memory device
摘要 The erase and verify method performs an erase operation and an erase verify read operation. If the erase verify read operation fails because unerased memory cells have been found, a normal memory read operation is performed in order to determine which memory cells are still programmed. A selective erase operation is then performed on the memory cells such that only the rows that comprise unerased memory cells undergo additional erase operations.
申请公布号 US7391654(B2) 申请公布日期 2008.06.24
申请号 US20050126682 申请日期 2005.05.11
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C11/34;G11C16/04 主分类号 G11C11/34
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